Title of article
Ion desorption caused by N 1s core-level photoexcitation of N2O on Si(1 0 0) surface
Author/Authors
Nagaoka، نويسنده , , Shin-ichi and Mase، نويسنده , , Kazuhiko، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2005
Pages
7
From page
276
To page
282
Abstract
We used the energy-selected-photoelectron photoion coincidence method, the resonance-Auger-electron photoion coincidence method and monochromatized synchrotron-radiation to study ion desorption caused by N 1s core-level photoexcitation of nitrous oxide (N2O) condensed and physisorbed on a Si(1 0 0) surface. The site-specificity was kept during the resonant Auger processes, that is, within the N 1s core-hole lifetime. However, the site-specific ion desorption was not clearly revealed, though some site-specificity had been reported in the vapor phase. The origin of the disappearance of the site-specificity was discussed in detail.
Keywords
Auger electron spectroscopy , Photon stimulated desorption (PSD) , Synchrotron radiation photoelectron spectroscopy , photochemistry , nitrogen oxides , Silicon
Journal title
Surface Science
Serial Year
2005
Journal title
Surface Science
Record number
1685384
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