• Title of article

    Interplay between adsorbed C60 fullerenes and point defects on a Si(111)–In reconstructed surface

  • Author/Authors

    Gruznev، نويسنده , , D.V. and Matetskiy، نويسنده , , A.V. and Zotov، نويسنده , , A.V. and Saranin، نويسنده , , A.A. and Chou، نويسنده , , J.P. and Wei، نويسنده , , C.M. and Wang، نويسنده , , Y.L.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2011
  • Pages
    5
  • From page
    2050
  • To page
    2054
  • Abstract
    Adsorption of C60 onto Si(111) 3 × 3 –In surface presents a fascinating example of interplay between molecular adsorbate and surface structural defects. It has been found that adsorbing C60 molecules are trapped by the substitutional Si-defects. In turn, the group of a few adsorbed C60 can act as a trap for the mobile vacancies of the 3 × 3 –In reconstruction. Namely, adsorbed C60 induces a strain in the indium layer, and when a mobile vacancy happens to get into the surface area surrounded by fullerenes, the In atoms between the C60 and the vacancy shift from the T4 to the H3 sites, fixing a vacancy in a given location.
  • Keywords
    Silicon , Indium , surface structure , Atom–solid interactions , Scanning tunneling microscopy (STM) , Fullerence
  • Journal title
    Surface Science
  • Serial Year
    2011
  • Journal title
    Surface Science
  • Record number

    1686224