• Title of article

    Electronic structure of the corrugated Cu3N network on Cu(110): Tunneling spectroscopy investigations

  • Author/Authors

    Bhattacharjee، نويسنده , , K. and Ma، نويسنده , , X.-D. and Zhang، نويسنده , , Y.Q. and Przybylski، نويسنده , , Ian M. and Kirschner، نويسنده , , J.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2012
  • Pages
    7
  • From page
    652
  • To page
    658
  • Abstract
    The local electronic structure of a submonolayer-thick corrugated Cu3N–Cu(110) network is investigated by low temperature scanning tunneling spectroscopy (LT-STS). The corrugation present in the Cu3N network plays a vital role by causing the surface electronic features to vary locally due to different N–Cu bonding. Our studies indicate a work function larger by 0.9 eV for Cu3N compared to bare Cu(110), suggesting the formation of a significant surface dipole. Theoretically predicted various N 2p, Cu 3d hybridized states have been shown and explicitly verified by a combination of constant height and constant current tunneling spectroscopy measurements, thereby providing information about the chemical composition of the N–Cu(110) network.
  • Keywords
    Cu3N network , Electronic structure , Scanning tunneling spectroscopy
  • Journal title
    Surface Science
  • Serial Year
    2012
  • Journal title
    Surface Science
  • Record number

    1686367