A 2-D mesoscopic model coupling mechanical and diffusion for electromigration in thin films

Electromigration is an important mechanism of deformation and failure in miniaturized electronics materials. In this paper, a 2-D mesoscopic simulation method is developed for analyzing electromigration-induced stress in thin films and finite element method is implemented for solution. Numerical simulations are compared with theoretical result and comparisons validate the model. The method has advantage in describing boundary conditions for constrained diffusion when focusing on creep process of thin films.