Title of article
In situ surface phases and silicon-adatom geometry of the (2×2)C structure on 6H-SiC(0001̄)
Author/Authors
Seubert، نويسنده , , A. Thybusch-Bernhardt، نويسنده , , J. and Nerding، نويسنده , , M. and Starke، نويسنده , , U. and Heinz، نويسنده , , K.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
4
From page
45
To page
48
Abstract
A (2×2) reconstruction on 6H-SiC(0001̄), obtained by annealing an ex situ prepared or a silicon-capped sample, was investigated using quantitative low-energy electron diffraction. The surface geometry is characterized by one silicon adatom per unit cell in three-fold hollow coordination (H3 sites). The topmost two substrate bilayers are found to be preferentially rotated by 60° with respect to each other, corresponding to a hexagonal type of stacking present at the very surface.
Keywords
Low energy electron diffraction (LEED) , Low index single crystal surfaces , Scanning tunneling microscopy , surface structure , morphology , Roughness , and topography , silicon carbide , Auger electron spectroscopy , Growth
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1687770
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