• Title of article

    First-principles calculations on surface hydroxyl impurities in BaF2

  • Author/Authors

    Shi، نويسنده , , H. and Jia، نويسنده , , R. and Eglitis، نويسنده , , R.I.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    6
  • From page
    220
  • To page
    225
  • Abstract
    OH− impurities located near the (1 1 1) BaF2 surface have been studied by using density functional theory (DFT) with hybrid exchange potentials, namely DFT-B3PW. Twenty surface OH− configurations were studied, and the hydroxyls located on the first surface layer are the energetically most favorable configurations. For the (1 1 1) BaF2 surface atomic layers, the surface hydroxyls lead to a remarkable XY-translation and a dilating effect in the Z-direction, overcoming the surface shrinking effect in the perfect slab. Bond population analysis shows that the surface effect strengthens the covalency of surface OH− impurities. The studies on band structures and density of states (DOS) of the surface OH−-impurity systems demonstrate that there are two defect levels induced by OH− impurities. The O px and py orbitals form two superposed occupied O bands, located above the valence bands (VB), and the H s orbitals do the major contribution to an empty H band, located below the conduction bands (CB). Because of the surface effect, the O bands move downward, toward the VB with respect to these bands in the bulk case, and this leads to narrowing of the VB → O gap and widening of the O → H gap which corresponds to the first optical absorption.
  • Keywords
    BaF2 , DFT , Electronic structure , Surface hydroxyl impurities , Band structures
  • Journal title
    Computational Materials Science
  • Serial Year
    2012
  • Journal title
    Computational Materials Science
  • Record number

    1689442