• Title of article

    Electronic and optical properties of W-doped SnO2 from first-principles calculations

  • Author/Authors

    Zhou، نويسنده , , Wei and Liu، نويسنده , , Lijuan and Yuan، نويسنده , , Mengying and Song، نويسنده , , Qinggong and Wu، نويسنده , , Ping، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    6
  • From page
    109
  • To page
    114
  • Abstract
    The electronic and optical properties of W-doped SnO2 are investigated by first-principles calculations in this work. The results show that the Fermi level shifts into the conduction band and the compound exhibits n-type metallic characters with high conductivity when W atoms substitute Sn atoms. As for defect cases, oxygen vacancies increase the density of states near the Fermi level resulting in a possible increase in the conductivity of W-doped SnO2, while the Sn vacancies make the Fermi level shift into the valence band and narrow the band gap. And the formation energy analysis indicates the possibility of W dopant and related defects forming in SnO2 crystal. The W-doped SnO2 shows high optical anisotropy, and the blue-shift of optical spectra can be observed. Additionally, the increased absorption in the visible region can be expected with the presence of oxygen vacancies in the crystal.
  • Keywords
    electronic properties , Optical properties , First-Principles Calculations , transparent conducting oxide
  • Journal title
    Computational Materials Science
  • Serial Year
    2012
  • Journal title
    Computational Materials Science
  • Record number

    1689497