Title of article
Electron accumulation layer on clean In-terminated InAs(0 0 1)(4×2)-c(8×2) surface
Author/Authors
De Padova، نويسنده , , P. and Quaresima، نويسنده , , C. and Perfetti، نويسنده , , P. and Larciprete، نويسنده , , R. and Brochier، نويسنده , , Rafael R. and Richter، نويسنده , , C. and Ilakovac، نويسنده , , V. and Bencok، نويسنده , , P. P. Teodorescu ، نويسنده , , C. and Aristov، نويسنده , , V.Y. and Johnson، نويسنده , , R.L. and Hricovini، نويسنده , , K.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
6
From page
587
To page
592
Abstract
We have investigated clean In-terminated InAs(0 0 1)(4×2)-c(8×2) surface by LEED, STM and high-resolution core-level and valence band (VB) spectroscopies. The In4d and As3d core levels showed the presence of chemically shifted components. The decomposition of In4d core level exhibited a new surface component located close to that of free indium metal. This indicates that the origin of the electron emission at the Fermi level measured in the VB spectra is probably due to the free In charge. STM measurements showed a uniform distribution of charge on the In-rows, which are highly ordered over large areas of the surface.
Keywords
Low energy electron diffraction (LEED) , Scanning tunneling microscopy , Indium arsenide , Electron emission
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1690089
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