Growth of Yb silicide on Si(1 0 0): structure and electronic properties as a function of annealing temperature

The growth of Yb on Si(1 0 0) from 1 to 12 ML as a function of the annealing temperature has been monitored with low energy electron diffraction (LEED) and the electronic properties were studied by He I photoemission and He metastable deexcitation spectroscopy (MDS). The annealing temperature (ranging from 590°C to 640°C) induces a 3×1 double domain LEED pattern. Correspondingly, a change in the electronic properties is observed, with the appearance of well defined s–p type features in MDS and UPS. This stage corresponds to the formation of a well ordered silicide film. At increasing temperature Yb is progressively diluted in a Si rich surface.