Title of article
Cross-sectional high-resolution transmission electron microscopy observation of Si(1 1 3) 3×2 structure
Author/Authors
Takeguchi، نويسنده , , Masaki and Tanaka، نويسنده , , Miyoko and Yasuda، نويسنده , , Hidehiro and Furuya، نويسنده , , Kazuo، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
7
From page
1385
To page
1391
Abstract
Atomic structure of Si(1 1 3) 3×2 reconstructed surface was examined by high-resolution transmission electron microscopy (HRTEM). Cross-sectional atomic structure of the Si(1 1 3) 3×2 was observed along [1̄ 1 0] direction at specimen temperature of about 800 K inside an ultrahigh vacuum transmission electron microscope. Simulated images for some probable structure models were compared with the experimental HRTEM images. It was found that, if void area in Ranke’s model is filled by adatom so that a row of adatoms is created, the simulated HRTEM image shows good agreement with the observed one. The structure model recommended by Dabrowski et al. [Surf. Sci. 331–333 (1995) 1022; Phys. Rev. Lett. 73 (1994) 1660] was not able to explain the HRTEM images obtained in the present work.
Keywords
Electron microscopy , surface structure , morphology , and topography , Roughness , Silicon , High index single crystal surfaces
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1690381
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