• Title of article

    Prediction of topological insulating behavior in inverse Heusler compounds from first principles

  • Author/Authors

    Zhang، نويسنده , , X.M. and Liu، نويسنده , , E.K. and Liu، نويسنده , , Z.Y. and Liu، نويسنده , , G.D. and Wu، نويسنده , , G.H. and Wang، نويسنده , , W.H.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2013
  • Pages
    5
  • From page
    145
  • To page
    149
  • Abstract
    The topological band structures of the X2YZ inverse Heusler compounds have been investigated by the first-principle calculations. The results of this study clearly indicate that a large number of inverse Heusler compounds naturally exhibit an inverted band structure. We found that, similar to the half-Heusler family, these inverse Heusler compounds can realize the topological insulating state under hydrostatic or uniaxial lattice expansion. Importantly, most of these compounds possess a negative formation energy, which makes them more suitable in material growth and could easily achieve the topological insulating behavior by alloying or proper strain.
  • Keywords
    Topological insulator , Heusler Compound , Electronic structure
  • Journal title
    Computational Materials Science
  • Serial Year
    2013
  • Journal title
    Computational Materials Science
  • Record number

    1690534