Title of article
Surface conductance of Si(1 0 0)2×1 and Si(1 1 1)7×7
Author/Authors
Yoo، نويسنده , , Kwonjae and Weitering، نويسنده , , Hanno H. Leuchte، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
6
From page
482
To page
487
Abstract
The surface conductance of Si(1 0 0)2×1 and Si(1 1 1)7×7 was measured as a function of temperature on a fully-depleted Si/SiO2/Si substrate. The surface conductance of Si(1 0 0)2×1 shows a clear signature of the c(4×2)→2×1 order–disorder surface phase transition near 200 K. The surface conductance of Si(1 1 1)7×7 increases dramatically after passivation with molecular oxygen. This phenomenon is not yet understood.
Keywords
Low energy electron diffraction (LEED) , surface recombination , Scanning tunneling microscopy , etc.) , Silicon , Semiconducting surfaces , Oxidation , Surface electrical transport (surface conductivity
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1691072
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