Title of article
A low-temperature scanning tunneling microscopy study on the Sn- and Zn-doped InP(1 1 0) surfaces
Author/Authors
de Kort، نويسنده , , R and Kets، نويسنده , , W and van Kempen، نويسنده , , H، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
6
From page
495
To page
500
Abstract
A low-temperature scanning tunneling microscope has been used to study the (1 1 0)-cleavage surface of indium phosphide (InP) at 4.2 K. InP is a III–V compound semiconductor, and we studied the behavior of doping atoms at different bias voltages in both n- and p-type InP. In neither the n- nor the p-type InP did we observe Friedel oscillations, but the p-type InP with a Zn-dopant concentration of 2.7×1018 cm−3 showed an interesting behavior at positive sample voltages: upon moving the tip Fermi level to the bottom of the conduction band, we observed that depressions in the surface topography caused by the influence of the Zn doping atoms changed into elevations with a triangular shape. This has previously been observed on p-type GaAs(1 1 0), and an explanation for these triangular features is not yet available.
Keywords
Surface electronic phenomena (work function , Surface potential , etc.) , morphology , surface structure , Roughness , Indium phosphide , and topography , Surface defects , Tunneling , Low index single crystal surfaces , Scanning tunneling microscopy , Semiconducting surfaces , Surface states
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1691078
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