Electronic structure and reactivity of the Co/MoS2(0 0 0 1) interface

The electronic structure and the surface reactivity of Co deposited on MoS2(0 0 0 1) has been investigated using angle-resolved photoemission spectroscopy. After depositing ∼1 ML Co, the surface becomes metallic. The interface is non-reactive at room temperature. Besides the observation of an electronic band due to Co d electrons, the only significant modification of the surface electronic structure after Co deposition, is an overall shift of ∼0.7 eV due to the formation of a Schottky barrier. The interface was annealed to increasingly higher temperatures. It remains unreactive up to 800 K. Above this temperature, the Co-induced intensity diminishes, and further changes are detected in the valence band, signaling partial reaction with the substrate.