Title of article
STM study of dynamical effects on submonolayer phases of Pb/Si(1 1 1)
Author/Authors
Custance، نويسنده , , O. and Brihuega، نويسنده , , I. and Veuillen، نويسنده , , J.-Y. and G?mez-Rodr??guez، نويسنده , , J.M. and Bar?، نويسنده , , A.M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
8
From page
878
To page
885
Abstract
By means of STM we have been able to analyze in real time the complex dynamical processes that take place at room temperature in the interface between Pb/Si(1 1 1)-(1×1) and 1/3 ML α-Pb/Si(1 1 1)-(√3×√3)R30° reconstructions. We have found that the border between these reconstructions is highly mobile, showing a fluctuating character between 1×1 regions and defect free areas presenting the α-(√3×√3)R30° reconstruction. These fluctuations involve a large number of atoms in cooperative movement as well as atom recombination in the border of the two reconstructions. The intrinsic character of these effects versus possible STM influence has been analyzed and discussed, and a field-induced diffusion mechanism is tentatively suggested.
Keywords
Lead , and topography , Roughness , morphology , epitaxy , growth , surface structure , Scanning tunneling microscopy , Silicon
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1691236
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