Title of article
Epitaxial metallic nanostructures on GaAs
Author/Authors
Mart??nez Boubeta، نويسنده , , C. and Menéndez، نويسنده , , J.L. and Costa-Kr?mer، نويسنده , , J.L. and Garc??a، نويسنده , , J.M. and Anguita، نويسنده , , J.V. and Besc?s، نويسنده , , B. and Cebollada، نويسنده , , Marيa A. and Briones، نويسنده , , F. and Chernykh، نويسنده , , A.V. and Malikov، نويسنده , , I.V. and Mikhailov، نويسنده , , G.M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
6
From page
910
To page
915
Abstract
High quality metal/insulator heterostructures are grown epitaxially on semiconductor GaAs(1 0 0) substrates using appropriate MgO(1 0 0) buffer layers. Two model systems are described: Fe/MgO/Fe trilayers, that are used to fabricate and study epitaxial magnetic tunnel junctions, and W(1 0 0) films, which exhibit ballistic transport properties with high electron mobility. In both cases the quality of the crystalline structure as well as the interfaces at the atomic level are related to the observed magnetic and transport properties.
Keywords
Iron , Tungsten , Magnesium oxides , Metal–insulator interfaces , Metal–semiconductor magnetic thin film structures , epitaxy , Electrical transport measurements , Magnetic phenomena (cyclotron resonance , Phase transitions , etc.)
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1691248
Link To Document