Title of article
Infrared spectroscopy study of adsorption of silane on Si(0 0 1)
Author/Authors
Shinohara، نويسنده , , Masanori and Kimura، نويسنده , , Yasuo and Saito، نويسنده , , Mineo and Niwano، نويسنده , , Michio، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
6
From page
96
To page
101
Abstract
We used infrared absorption spectroscopy in the multiple internal reflection geometry to investigate the adsorption of SiH4 on the Si(0 0 1)(2×1) surface. Comparing infrared data with the density functional cluster calculation, we show that at low hydrogen coverage the silane molecule dissociatively adsorbs on Si(0 0 1)(2×1) to populate a dihydride (SiH2) at the bridge site between two adjacent dimers and monohydride species; monohydrides are formed by terminating the unsaturated dangling bonds of dimers by hydrogen atoms released from the silane molecule. We suggest that at high hydrogen coverage, silane adsorbs onto a single dimer to generate monohydride and sylil groups (–SiH3). We also demonstrate that the dihydride species that is initially generated by silane adsorption, decomposes to monohydride species even at room temperature.
Keywords
Infrared absorption spectroscopy , Semiconducting surfaces , Surface chemical reaction , Silicon , silane
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1691822
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