• Title of article

    Infrared spectroscopy study of adsorption of silane on Si(0 0 1)

  • Author/Authors

    Shinohara، نويسنده , , Masanori and Kimura، نويسنده , , Yasuo and Saito، نويسنده , , Mineo and Niwano، نويسنده , , Michio، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2002
  • Pages
    6
  • From page
    96
  • To page
    101
  • Abstract
    We used infrared absorption spectroscopy in the multiple internal reflection geometry to investigate the adsorption of SiH4 on the Si(0 0 1)(2×1) surface. Comparing infrared data with the density functional cluster calculation, we show that at low hydrogen coverage the silane molecule dissociatively adsorbs on Si(0 0 1)(2×1) to populate a dihydride (SiH2) at the bridge site between two adjacent dimers and monohydride species; monohydrides are formed by terminating the unsaturated dangling bonds of dimers by hydrogen atoms released from the silane molecule. We suggest that at high hydrogen coverage, silane adsorbs onto a single dimer to generate monohydride and sylil groups (–SiH3). We also demonstrate that the dihydride species that is initially generated by silane adsorption, decomposes to monohydride species even at room temperature.
  • Keywords
    Infrared absorption spectroscopy , Semiconducting surfaces , Surface chemical reaction , Silicon , silane
  • Journal title
    Surface Science
  • Serial Year
    2002
  • Journal title
    Surface Science
  • Record number

    1691822