Title of article
Temperature dependence of photo-hole decay in 4d derived Quantum Well States in monolayer Ag(111) films on Pd(111), Ni(111), Mo(110) and Cu(100)
Author/Authors
Mik?i? Trontl، نويسنده , , V. and Pletikosi?، نويسنده , , I. and Milun، نويسنده , , M. and Pervan، نويسنده , , P.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2012
Pages
6
From page
840
To page
845
Abstract
We present experimental data on the temperature dependence of photo-hole decay obtained by Angle Resolved Photoemission (ARPES) measurements from 4d derived Quantum Well States (QWS) on Ag(111) monolayer films deposited on Pd(111), Ni(111), Mo(110) and Cu(100). We have found a significant increase of the Ag 4d electron–phonon (e-ph) coupling strength with respect to the bulk values. The increase is attributed to different mechanisms that are associated with the interaction of the Ag film with under laying substrate. It is proposed that the main channels that contribute to the increased e-ph coupling originate from the inter-band transitions that involve bulk states of the substrates.
Keywords
Electron–phonon coupling , d-quantum well states , ARPES , Ag monolayer
Journal title
Surface Science
Serial Year
2012
Journal title
Surface Science
Record number
1692199
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