Title of article
Single domain Ca-induced reconstruction on vicinal Si(1 1 1)
Author/Authors
D.Y. Petrovykh، نويسنده , , D.Y and Altmann، نويسنده , , K.N and Lin، نويسنده , , J.-L and Himpsel، نويسنده , , F.J and Leibsle، نويسنده , , F.M، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
12
From page
269
To page
280
Abstract
High-quality vicinal Si(1 1 1) surfaces are used as templates to create single domains of the Si(1 1 1)3×1-Ca reconstruction which exhibit atomic chains parallel to Si steps. Scanning tunneling microscope images support the formation of honeycomb chains of Si atoms, rather than zigzag chains proposed in earlier models. Angle-resolved photoemission is used to map out the dispersion of valence band states parallel and perpendicular to the chains. A gap of ≈0.9 eV is found below the Fermi level with both in-plane and out-of-plane polarization of the synchrotron light. The observed semiconducting behavior suggests that the honeycomb chain channel model proposed for the alkali-induced 3×1 reconstruction be modified for divalent alkaline earths, e.g. a 3×2 structure with 1/6 monolayer coverage.
Keywords
Alkaline earth metals , Synchrotron radiation photoelectron spectroscopy , Scanning tunneling microscopy , Surface electronic phenomena (work function , etc.) , Vicinal single crystal surfaces , Surface states , Surface potential , Silicon , Surface relaxation and reconstruction
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1694633
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