• Title of article

    Growth and structure of Fe, Co and Ni films on hydrogen-terminated Si(1 1 1) surfaces

  • Author/Authors

    Gruyters، نويسنده , , M.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2002
  • Pages
    8
  • From page
    53
  • To page
    60
  • Abstract
    Scanning tunneling microscopy (STM), low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and X-ray diffraction (XRD) have been used to provide a detailed analysis of the growth and structure of thin 3d transition metal films on H/Si(1 1 1)1×1 substrates. The high homogeneity and chemical integrity of wet chemically prepared substrates has been demonstrated by STM, LEED and AES. For room temperature deposition of Co, STM measurements have revealed an island growth mode and the formation of dense granular films. It has also been evidenced by XRD that hydrogen-terminated Si(1 1 1) substrates enable film growth with single crystalline surface orientation for Fe, Co and Ni.
  • Keywords
    Scanning tunneling microscopy , growth , Silicon , Metallic films
  • Journal title
    Surface Science
  • Serial Year
    2002
  • Journal title
    Surface Science
  • Record number

    1694828