Title of article
Study of adsorption of Al atom on Si(1 1 1)7 × 7 surface
Author/Authors
Uchida، نويسنده , , Hironaga and Kuroda، نويسنده , , Tadashi and Mohamad، نويسنده , , Fariza binti and Kim، نويسنده , , Jooyoung and Nishimura، نويسنده , , Kazuhiro and Inoue، نويسنده , , Mitsuteru، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
6
From page
197
To page
202
Abstract
We investigated adsorption of an Al atom on the Si(1 1 1)7 × 7 surface by using a scanning tunneling microscope. The evaporated Al atom displaced a Si center adatom of the surface; the expelled Si atom diffused inside a half unit cell of the Si(1 1 1)7 × 7 surface. The adsorbed single Al atom, which shows bias voltage dependency, hopped among three center adatom sites inside the half unit cell. Ab initio molecular orbital method was used to investigate the adsorption of Al atom on the surface.
Keywords
Silicon , aluminum , Ab initio quantum chemical methods and calculations , Diffusion and migration , Scanning tunneling microscopy , Adsorption kinetics , Adatoms
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1696929
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