• Title of article

    Following the oxidation of yttrium silicide epitaxially grown on Si(1 1 1) by core level photoemission spectroscopy

  • Author/Authors

    Rogero، نويسنده , , C. and Lizzit، نويسنده , , S. and Goldoni، نويسنده , , A. and Martيn-Gago، نويسنده , , J.A.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2006
  • Pages
    6
  • From page
    841
  • To page
    846
  • Abstract
    We have identified, by means of synchrotron radiation X-ray photoemission spectroscopy, several core-level shifted components in the Si-2p photoemission core level peak from a thin yttrium silicide layer epitaxially grown on a Si(1 1 1) surface. We have unequivocally assigned these components to different environments of the Si atoms in the silicide structure. This information has been used to monitor a surface oxidation process promoted by room temperature oxygen adsorption, identifying the final product of this reaction as a silicate-type ternary compound.
  • Keywords
    Synchrotron radiation photoelectron spectroscopy , epitaxy , Oxidation , Yttrium silicides , Metal–semiconductor interfaces
  • Journal title
    Surface Science
  • Serial Year
    2006
  • Journal title
    Surface Science
  • Record number

    1697795