Title of article
Following the oxidation of yttrium silicide epitaxially grown on Si(1 1 1) by core level photoemission spectroscopy
Author/Authors
Rogero، نويسنده , , C. and Lizzit، نويسنده , , S. and Goldoni، نويسنده , , A. and Martيn-Gago، نويسنده , , J.A.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
6
From page
841
To page
846
Abstract
We have identified, by means of synchrotron radiation X-ray photoemission spectroscopy, several core-level shifted components in the Si-2p photoemission core level peak from a thin yttrium silicide layer epitaxially grown on a Si(1 1 1) surface. We have unequivocally assigned these components to different environments of the Si atoms in the silicide structure. This information has been used to monitor a surface oxidation process promoted by room temperature oxygen adsorption, identifying the final product of this reaction as a silicate-type ternary compound.
Keywords
Synchrotron radiation photoelectron spectroscopy , epitaxy , Oxidation , Yttrium silicides , Metal–semiconductor interfaces
Journal title
Surface Science
Serial Year
2006
Journal title
Surface Science
Record number
1697795
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