Title of article
Scattering of Cu(1 0 0) image state electrons from single Cu adatoms and vacancies: A comparative study
Author/Authors
Olsson، نويسنده , , F.E. and Borisov، نويسنده , , A.G. and Gauyacq، نويسنده , , J.-P.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
11
From page
2184
To page
2194
Abstract
A theoretical study of the electron dynamics in image potential states on Cu(1 0 0) surfaces with different types of defects (Cu adatoms and Cu vacancies) is presented for low defect density at the surface. A wave packet propagation approach is employed for the electron scattering calculations, where the defect induced potentials are obtained from an ab initio density functional study. Scattering of the image state electron by a defect induces inter-band and intra-band transitions leading, respectively, to the population decay and to the dephasing of the image states. Comparison of the respective effects of adatoms and vacancies shows that Cu adatoms are much more efficient in inducing population decay and dephasing of the image potential states. Present results for the case of Cu adatoms are compared with available time-resolved two-photon photoemission data.
Keywords
Interface states , computer simulations , Density functional calculations , Low index single crystal surfaces , Photoelectron spectroscopy
Journal title
Surface Science
Serial Year
2006
Journal title
Surface Science
Record number
1698308
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