Title of article
Morphological and magnetic properties of Ge/MnxGe1−x/Ge(0 0 1)2 × 1 diluted magnetic semiconductor
Author/Authors
De Padova، نويسنده , , P. and Generosi، نويسنده , , A. and Paci، نويسنده , , B. and Albertini، نويسنده , , V. Rossi and Perfetti، نويسنده , , P. and Quaresima، نويسنده , , C. and Olivieri، نويسنده , , B. E. Richter، نويسنده , , M.C. and Heckmann، نويسنده , , O. and D’Orazio، نويسنده , , F. and Lucari، نويسنده , , F. and Hricovini، نويسنده , , K.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
5
From page
4190
To page
4194
Abstract
We studied morphological and magnetic properties of Ge/MnxGe1−x/Ge(0 0 1)2 × 1, x = 0.02–0.04. Several MnxGe1−x alloys were grown on Ge(0 0 1)2 × 1 by molecular beam epitaxy, as a function of substrate temperature and Mn concentration. The samples were characterized in situ by RHEED, and ex situ by energy dispersive X-ray reflectivity (EDXR) and magneto-optical Kerr effect, (MOKE). From RHEED analysis we found an optimal growth temperature Tepi = 523 K to achieve 2D epitaxial MnxGe1−x (x = 0.02–0.04) alloy on a Ge(0 0 1) substrate. X-ray reflectivity measurements provided: the film roughness, the MnxGe1−x scattering length density, and the average thickness for all samples. MOKE analysis showed ferromagnetism with Curie temperature TC = 270 K for samples grown at Tepi = 523 K.
Keywords
RHEED , MOKE , EDXR , DMS
Journal title
Surface Science
Serial Year
2006
Journal title
Surface Science
Record number
1699541
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