• Title of article

    Thermal decomposition of ethylene on Si(1 1 1): Formation of the Si(1 1 1):carbon structure

  • Author/Authors

    Kim، نويسنده , , J.W. and Kampen، نويسنده , , T.U. and Horn، نويسنده , , K. and Jung، نويسنده , , M.-C.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2007
  • Pages
    5
  • From page
    694
  • To page
    698
  • Abstract
    Adsorption and thermal decomposition of ethylene on Si(1 1 1) have been studied by photoelectron spectroscopy. The evolution of the C 1s and Si 2p core-levels upon the adsorption of the ethylene and the formation of C-incorporated surfaces by thermal annealing is analyzed, from which the unique chemical and structural properties of 3 × 3 reconstructed phase can be derived. We also discuss the coverage of the C atoms involved and their position on the 3 × 3 surface in terms of a structure model.
  • Keywords
    carbon , Surface chemical reaction , Synchrotron radiation photoelectron spectroscopy , Silicon , ethylene
  • Journal title
    Surface Science
  • Serial Year
    2007
  • Journal title
    Surface Science
  • Record number

    1700199