Title of article
Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies
Author/Authors
Hirokazu Fukidome، نويسنده , , Hirokazu and Tanaka، نويسنده , , Kei and Yoshimura، نويسنده , , Masamichi and Ueda، نويسنده , , Kazuyuki and Guo، نويسنده , , Fang-Zhun and Kinoshita، نويسنده , , Toyohiko and Kobayashi، نويسنده , , Keisuke، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2007
Pages
5
From page
4675
To page
4679
Abstract
The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.
Keywords
Oxidation , Photoemission electron microscopy , X-ray photoelectron spectroscopy , Silicon , Mirror electron microscopy
Journal title
Surface Science
Serial Year
2007
Journal title
Surface Science
Record number
1702031
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