• Title of article

    The growth of epitaxial VN(1 1 1) nanolayer surfaces

  • Author/Authors

    Glaser، نويسنده , , A. and Surnev، نويسنده , , David S. L. Ramsey، نويسنده , , M.G. and Lazar، نويسنده , , P. and Redinger، نويسنده , , J. and Podloucky، نويسنده , , R. and Netzer، نويسنده , , F.P.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2007
  • Pages
    7
  • From page
    4817
  • To page
    4823
  • Abstract
    Ultrathin films of vanadium nitride (1–20 monolayers = nanolayers) with (1 1 1) orientation have been grown on a Pt(1 1 1) surface by reactive evaporation of vanadium in NH3 atmosphere. The VN(1 1 1) surfaces have been investigated by X-ray and UV photoelectron spectroscopy, LEED, work function measurements, and ab initio DFT calculations. Nearly stoichiometric, well-ordered VN0.9 overlayers with their (1 × 1) unit cells rotationally aligned to the high symmetry directions of the Pt substrate have been obtained after annealing the films deposited at 300–500 °C in vacuum. The experimental valence band spectra have been compared to the theoretical density of states for differently terminated VN(1 1 1) surfaces, i.e. V and N terminated surfaces, bare and with chemisorbed hydrogen. The comparison suggests that the VN(1 1 1) nanolayers are terminated by a hexagonal layer of vanadium atoms, possibly covered with some chemisorbed hydrogen (which may originate from the preparation procedure). The VN nanolayer growth on Pt(1 1 1) follows a Stranski–Krastanov layer-plus-island growth mode.
  • Keywords
    Photoelectron spectroscopy , Vanadium nitride , Density functional theory
  • Journal title
    Surface Science
  • Serial Year
    2007
  • Journal title
    Surface Science
  • Record number

    1702115