Title of article
Ionization of xenon Rydberg atoms at oxidized Si(1 0 0) surfaces
Author/Authors
Neufeld، نويسنده , , D.D. and Dunham، نويسنده , , H.R. and Wethekam، نويسنده , , S. and Lancaster، نويسنده , , J.C. and Dunning، نويسنده , , F.B.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2008
Pages
7
From page
1306
To page
1312
Abstract
The ionization of xenon Rydberg atoms excited to the lowest states in the n = 20 Stark manifold at Si(1 0 0) surfaces possessing a robust (∼10 Å) native oxide layer is investigated. The data show that a sizeable fraction of the incident atoms are ionized relatively far from the surface through enhanced tunneling due to the presence of localized stray fields at the surface associated with surface charging or with surface inhomogeneities. A simple model is presented to justify this assertion.
Keywords
field ionization , Ion–solid interactions , Surface electronic phenomena , Silicon oxides , Silicon , Single crystal surfaces , Insulating surfaces , Semiconducting surfaces
Journal title
Surface Science
Serial Year
2008
Journal title
Surface Science
Record number
1703040
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