• Title of article

    Chemisorption of tert-butanol on Si(1 0 0)

  • Author/Authors

    Chen، نويسنده , , T.-L. and Yilmaz، نويسنده , , M.B. and Potapenko، نويسنده , , D. and Kou، نويسنده , , A. and Stojilovic، نويسنده , , N. and Osgood Jr.، نويسنده , , R.M.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2008
  • Pages
    6
  • From page
    3432
  • To page
    3437
  • Abstract
    The chemisorption of tert-butanol, an important product in atomic layer deposition (ALD) of ZrO2 from the precursor, zirconium tetra-tert-butoxide, on Si(1 0 0)−(2 × 1), has been investigated using Auger electron spectroscopy (AES) and temperature-programmed desorption (TPD). The main desorption products of the TPD experiments are isobutene and molecular hydrogen. A comparison of TPD results obtained with a clean silicon surface with that from a hydrogen-terminated Si surface indicates no chemisorption in the latter case. AES measurements reveal the presence of carbon on the sample after TPD; the amount of carbon tracks the isobutene yield in TPD experiments. A comparison is made of observations with those expected from the known reactions of simple alcohols on Si(1 0 0)−(2 × 1) and the chemisorption attributed dominantly to O–H bond scission to yield an H and tert-butoxy-group-terminated surface.
  • Keywords
    atomic layer deposition , High-? dielectric oxide , tert-Butanol , Si(1  , 0  , 0) , Surface chemical reaction , Temperature-programmed desorption
  • Journal title
    Surface Science
  • Serial Year
    2008
  • Journal title
    Surface Science
  • Record number

    1703948