Ytterbium on vicinal Si(1 0 0): Growth and properties of the 2D wetting layer and the Yb silicide phase

The Yb growth on a vicinal Si(1 0 0) surface has been studied by scanning tunneling microscopy and low energy electron diffraction in the coverage range of 1–4 ML. Two different methods of the Yb/Si(1 0 0) interface formation are applied, leading to a remarkable modification of structural and morphological properties of two-dimensional (2D) wetting layer and Yb silicide phase. In particular, the switchover of the 2D layer orientation, similar to the case of the Bi nanolines on Si(1 0 0) [J.H.G. Owen, K. Miki, D.R. Bowler, J. Mater. Sci. 41 (2006) 4568], is observed depending on the growth procedure. Moreover, the structure and morphology of the Yb silicide phase is found to depend critically on the growth conditions, and the ability to grow very long, unidirectional Yb silicide nanowires is demonstrated. The results obtained are discussed in the context of the previous studies of 1D nanowires and 3D islands of rare-earth silicides on Si(1 0 0).