Title of article
Etching of silicon nanowires on Ag(1 1 0) by atomic hydrogen
Author/Authors
Salomon، نويسنده , , E. and Angot، نويسنده , , T. and Thomas، نويسنده , , C. and Layet، نويسنده , , J.-M. and Palmgren، نويسنده , , P. and Nlebedim، نويسنده , , C.I. and Gِthelid، نويسنده , , M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2009
Pages
5
From page
3350
To page
3354
Abstract
Scanning Tunnelling Microscopy, High Resolution Electron Energy Loss Spectroscopy and High Resolution X-Ray Photoelectron Spectroscopy have been used to study the adsorption of atomic hydrogen onto Si nanowires grown on Ag(1 1 0). We demonstrate that the hydrogen strongly interacts with the Si nanowires modifying their structural and electronic properties. Hydrogen atoms etch the Si nanowires and eventually lead to their complete removal from the Ag(1 1 0) surface.
Keywords
Silicon nanowires , Scanning tunnelling microscopy , Atomic hydrogen , X-ray photoelectron spectroscopy , Electron Energy Loss Spectroscopy
Journal title
Surface Science
Serial Year
2009
Journal title
Surface Science
Record number
1705228
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