Title of article
Characterization of early growth stages of Pb/Ge(001)
Author/Authors
Bavdek، نويسنده , , G. and Verdini، نويسنده , , A. and Cossaro، نويسنده , , A. and Morgante، نويسنده , , A. and Floreano، نويسنده , , L. and Cvetko، نويسنده , , D.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2014
Pages
5
From page
260
To page
264
Abstract
Early stages of thin Pb film growth on Ge(001) substrate, exhibiting quantum size effects (QSE), are characterized by means of Photoelectron Diffraction and Helium Atom Scattering. Pb is found to form a commensurate first monolayer, while an ordered layer-by-layer growth only sets in after deposition of 4 monolayers. In the intermediate coverage range no long range order of the overlayer is established and we find that uncorrelated islands of preferred four-layer thickness are formed. Continuous Pb film with long range order emerges through islands coalescence close to a coverage of 4 monolayers, upon which a more regular layer-by-layer growth mode sets in.
Keywords
Photoelectron diffraction , Helium atom scattering , Quantum size effects , Thin films growth , Metallic films
Journal title
Surface Science
Serial Year
2014
Journal title
Surface Science
Record number
1706568
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