Title of article
ZnO nanostructures for optoelectronics: Material properties and device applications
Author/Authors
Djurisic، Aleksandra B. نويسنده , , A.B. and Ng، نويسنده , , A.M.C. and Chen، نويسنده , , X.Y.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
69
From page
191
To page
259
Abstract
In recent years, there has been increasing interest in ZnO nanostructures due to their variety of morphologies and availability of simple and low cost processing. While there are still unanswered questions concerning fundamental properties of this material, in particular those related to defects and visible luminescence lines, great progress has been made in synthesis methods and device applications of ZnO nanostructures. In this review, we will provide a brief overview of synthesis methods of ZnO nanostructures, with particular focus on the growth of perpendicular arrays of nanorods/nanowires which are of interest for optoelectronic device applications. Then, we will provide an overview of material properties of ZnO nanostructures, issues related to doping with various elements to achieve either p- or n-type conductivity. Doping to alter optical or magnetic properties will also be discussed. Then, issues related to practical problems in achieving good electrical contacts to nanostructures will be presented. Finally, we will provide an overview of applications of ZnO nanostructures to light-emitting devices, photodetectors and solar cells.
Keywords
Nanomaterials , Photovoltaics , ZNO , LEDs
Journal title
Progress in Quantum Electronics
Serial Year
2010
Journal title
Progress in Quantum Electronics
Record number
1706782
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