• Title of article

    Semiconductor infrared up-conversion devices

  • Author/Authors

    Yang، نويسنده , , Y. and Zhang، نويسنده , , Y.H. and Shen، نويسنده , , W.Z. and Liu، نويسنده , , H.C.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    32
  • From page
    77
  • To page
    108
  • Abstract
    Various infrared up-conversion techniques have been developed, driven by applications including lasing, laser cooling, and infrared imaging. In this review article, we first present a brief overview of existing up-conversion techniques and then discuss in detail one particular approach. Among all types of up-conversion techniques, an integrated semiconductor photodetector-light-emitting diode (PD-LED) up-conversion device is the most promising one for infrared imaging applications. By now, PD-LED devices relying on various mechanisms, using different materials and structures, aiming at different wavelength regions, have been developed, and pixelless infrared imaging prototype devices have been demonstrated. We report the progress of semiconductor PD-LED up-conversion devices, and point out directions for future improvement.
  • Keywords
    Infrared , Up-conversion , Imaging , photodetector , Semiconductor , Light-emitting diode
  • Journal title
    Progress in Quantum Electronics
  • Serial Year
    2011
  • Journal title
    Progress in Quantum Electronics
  • Record number

    1706793