Dielectric properties of ceria and yttria-stabilized zirconia thin films grown on silicon substrates

The dielectric permittivities of fcc yttria-stabilized zirconia (YSZ) and ceria (CeO2) thin films as-grown on n-doped Si(100) substrates by electron beam evaporation at 200°C in the metal–insulator–semiconductor (MIS) configuration have been investigated. Two independent methods were used for this purpose, the high frequency limiting capacitance CP and feedback charge C–V plots. The values obtained are 16.8 (YSZ) and 2.8 (CeO2) in the case of CP and 18.3 (YSZ) and 3.4 (CeO2) from the C–V measurements. The hysteresis of C–V curves observed for both Al/YSZ and CeO2/Si/Au structures can be ascribed to the slow redistribution of negative mobile charges (oxygen ions O2−) present inside the YSZ and CeO2 films.