In situ Hall effect and conductivity measurements of ITO thin films

The application of transparent conductive oxides in most electronic devices requires a good knowledge of their electrical properties such as conductivity, but also carrier mobility. In addition, oxygen exchange plays a crucial role for post-deposition treatments and the functionality of devices. In order to elucidate the relation between electrical properties and oxygen equilibration a system for in situ Hall effect and electrical conductivity measurements of oxide thin films has been set up, giving the opportunity for temperature dependent measurements in controlled atmosphere. The use of the setup is exemplified with a Sn-doped In2O3 (ITO) thin film. The results show that oxygen equilibration is not the only factor which affects the electrical properties, but also other long term processes. The segregation of Sn to grain boundaries is discussed in this context.