Title of article
Simulation of flourine migration in NiF2
Author/Authors
Atkinson، نويسنده , , K.J.W. and Grimes، نويسنده , , Robin W. and Owens، نويسنده , , Scott L، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
6
From page
443
To page
448
Abstract
The point defect and transport properties of nickel fluoride have been predicted using atomistic simulation. Results suggest that the dominant intrinsic defect reaction is anion Frenkel, however, formation energies are sufficiently high to suggest that intrinsic defect concentrations are low. Migration activation energies are consistent with flourine, as the most highly mobile species, being transported in the ab plane via the formation of a split interstitial configuration. Transport of both flourine and nickel will be considerably anisotropic.
Keywords
Flourine migration , Point defect , Transport property
Journal title
Solid State Ionics
Serial Year
2002
Journal title
Solid State Ionics
Record number
1714567
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