• Title of article

    Simulation of flourine migration in NiF2

  • Author/Authors

    Atkinson، نويسنده , , K.J.W. and Grimes، نويسنده , , Robin W. and Owens، نويسنده , , Scott L، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2002
  • Pages
    6
  • From page
    443
  • To page
    448
  • Abstract
    The point defect and transport properties of nickel fluoride have been predicted using atomistic simulation. Results suggest that the dominant intrinsic defect reaction is anion Frenkel, however, formation energies are sufficiently high to suggest that intrinsic defect concentrations are low. Migration activation energies are consistent with flourine, as the most highly mobile species, being transported in the ab plane via the formation of a split interstitial configuration. Transport of both flourine and nickel will be considerably anisotropic.
  • Keywords
    Flourine migration , Point defect , Transport property
  • Journal title
    Solid State Ionics
  • Serial Year
    2002
  • Journal title
    Solid State Ionics
  • Record number

    1714567