Title of article
An XAS study of the defect structure of Ti-doped α-Cr2O3
Author/Authors
A. Blacklocks، نويسنده , , Aran N. and Atkinson، نويسنده , , Alan and Packer، نويسنده , , Robert J. and Savin، نويسنده , , Shelley L.P. and Chadwick، نويسنده , , Alan V.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
6
From page
2939
To page
2944
Abstract
The bulk defect structure in Cr2−xTixO3 (x = 0.05, 0.20 and 0.30) has been studied by X-ray absorption spectroscopy measurements at the Cr and Ti K-edges. The results show that the Ti is predominantly present in the IV oxidation state and resides on the normal Cr host lattice site. The dopant is charge compensated by Cr3+ vacancies and there is evidence for the formation of defect clusters; however, the detailed structure of these clusters could not be deduced.
Keywords
Chromium oxide , XAS , XANES , Gas sensor , Point Defects , EXAFS
Journal title
Solid State Ionics
Serial Year
2006
Journal title
Solid State Ionics
Record number
1719594
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