• Title of article

    Effect of Al doping on crystal structure and electrical conduction properties of LaGa0.9Mg0.1O2.95 perovskite compound

  • Author/Authors

    Kajitani، نويسنده , , Masahiro and Matsuda، نويسنده , , Motohide and Miyake، نويسنده , , Michihiro، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2007
  • Pages
    4
  • From page
    355
  • To page
    358
  • Abstract
    Doping effects of Al on crystal structures and electrical conductivities of LaGa0.9Mg0.1O2.95 perovskite compounds were investigated. As the amount of doping with Al increased, the symmetry of structure changed to the orthorhombic → the rhombohedral → the cubic, which is reportedly favorable for oxide ion conduction, and lattice parameters decreased monotonically. The Al-doped LaGa0.9Mg0.1O2.95 compounds showed mixed (hole and ion) conduction in air and pure oxide ion conduction in low oxygen partial pressure. The oxide ion conductivities decreased with Al contents in spite of the cubic structure formation. The degradation in oxide ion conduction was attributable to narrowed oxide ion conduction paths in Al-doped structures.
  • Keywords
    crystal structure , oxide ion conductor , Tolerance factor , free volume , Al doping , Lanthanum gallate , Perovskite
  • Journal title
    Solid State Ionics
  • Serial Year
    2007
  • Journal title
    Solid State Ionics
  • Record number

    1719862