Title of article
Relationship between oxide-ion conductivity and dielectric relaxation in Sm-doped CeO2
Author/Authors
Yamamura، نويسنده , , Hiroshi and Takeda، نويسنده , , Saori and Kakinuma، نويسنده , , Katsuyoshi، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2007
Pages
5
From page
889
To page
893
Abstract
The relationship between electrical conduction and dielectric relaxation was investigated for 20 at.% Sm doped CeO2 (Ce0.8Sm0.2O2−δ), which is a typical oxide-ion conductor. Numerical calculation clarified that the anomalously large dielectric constant (εr′) originated from the superimposition of both Debye-type polarization and interfacial polarization between electrolyte and electrode. Two kinds of the Debye-type relaxation appeared at and above 673 K, which were assigned to defect associates, (SmCe′–VO) and (SmCe′–VO–SmCe′)x. The Debye-type polarization was also confirmed by analyzing the dielectric loss factor (εrʺ). Ac conductivity (σac) in high temperature and high frequency regions agreed with dc conductivity (σdc), while the dispersion of σac was ascribed to the Debye-type polarizations.
Keywords
Defect associate , oxygen vacancy , Oxide-ion conductivity , dielectric constant
Journal title
Solid State Ionics
Serial Year
2007
Journal title
Solid State Ionics
Record number
1720015
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