• Title of article

    Ab initio study of native point defects in ZnO under pressure

  • Author/Authors

    Sha، نويسنده , , Xiaojing and Tian، نويسنده , , Fubo and Li، نويسنده , , Da and Duan، نويسنده , , Defang and Chu، نويسنده , , Binhua and Liu، نويسنده , , Yunxian and Liu، نويسنده , , Bingbing and Cui، نويسنده , , Tian، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2015
  • Pages
    5
  • From page
    130
  • To page
    134
  • Abstract
    We investigate the formation enthalpies and transition energy levels for several native point defects in B1 phase of ZnO under applied hydrostatic pressure using density functional theory. The formation volume decreases gradually with increasing pressure, and increases linearly with the number of electrons adding to the system. In negatively charged state, the calculated formation enthalpy decreases with pressure, suggesting an increase in the equilibrium defect concentration. The behavior of the positively charged state is on the contrary, consistent with the results of the formation volume. In particular, the formation enthalpy of oxygen vacancy increases with pressure, which makes the defect formation harder under pressure. Under Zn-rich conditions, the “negative-U” phenomenon of oxygen vacancy, which appears under ambient conditions, vanishes with further increase in pressure when the Fermi enthalpy is close to the conduction band minimum.
  • Keywords
    C. Impurities in semiconductors , E. Strain , A. Semiconductors , high pressure
  • Journal title
    Solid State Communications
  • Serial Year
    2015
  • Journal title
    Solid State Communications
  • Record number

    1752112