Title of article
Thermoelectric behaviour of (Bi0.5Sb0.5)2Te3 semiconducting alloy thin films
Author/Authors
Damodara Das، نويسنده , , V. and Chandra Mallik، نويسنده , , Ramesh، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
217
To page
220
Abstract
The Jain–Verma theory has been applied to the thermoelectric data of vacuum flash-evaporated and annealed polycrystalline thin films of (Bi0.5Sb0.5)2Te3 alloys of different thicknesses to study the nature of principal carrier scattering mechanism and also to know the extent of other scattering mechanisms, simultaneously. It is found that the value of the energy dependent scattering index parameter lies between −0.45 and −0.4. This indicates that, even though the principal scattering mechanism in the films is the normal lattice scattering, other scattering like ‘impurity’ scattering, surface scattering and grain boundary scattering may be present.
Keywords
D. Thermoelectric power , E. Scattering mechanism , A. Thin films
Journal title
Solid State Communications
Serial Year
2001
Journal title
Solid State Communications
Record number
1761670
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