• Title of article

    The diffusion of vacancies near a diamond (001) surface

  • Author/Authors

    Hu، نويسنده , , X.J. and Dai، نويسنده , , Y.B. and Li، نويسنده , , R.B. and Shen، نويسنده , , H.S. and He، نويسنده , , X.C.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    4
  • From page
    45
  • To page
    48
  • Abstract
    The diffusion process of the vacancy near diamond (001) surface at different temperatures was investigated by molecular dynamics simulation. The vacancy in the second layer begins to diffuse towards the surface at about 1000 K, and it can migrate to the surface in the temperature range of 1400–2000 K. In the 1400–1800 K temperature range, two migration stages, which correspond to two maxima in the mean square displacement curves, are observed in the vacancy diffusion process. In addition, the vacancy diffusion path is obtained without any constraints imposed on the atoms, and the calculated diffusion barrier of the vacancy near diamond (001) surface is about 0.42 eV.
  • Keywords
    A. Diamond , C. Vacancies , D. Diffusion , E. Molecular dynamics simulation
  • Journal title
    Solid State Communications
  • Serial Year
    2002
  • Journal title
    Solid State Communications
  • Record number

    1762105