Title of article
Optical transitions involving impurities in semiconductors under additional infrared laser radiation
Author/Authors
Nunes، نويسنده , , O.A.C. and Fonseca، نويسنده , , A.L.A. and Lima، نويسنده , , F.M.S. and Agrello، نويسنده , , D.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
425
To page
428
Abstract
The influence of an intense infrared (IR) laser field on the optical absorption edge associated to acceptor impurities of a direct-gap semiconductor is discussed. It is shown that as the IR laser field intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the GaAs irradiated by an intense CO2 laser.
Keywords
D. Radiation effects , D. Optical properties , C. Impurities in semiconductors
Journal title
Solid State Communications
Serial Year
2002
Journal title
Solid State Communications
Record number
1762250
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