Title of article
Manipulation of spin dephasing in InAs quantum wires
Author/Authors
Cheng، نويسنده , , J.L. and Weng، نويسنده , , M.Q. and Wu، نويسنده , , M.W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
365
To page
368
Abstract
The spin dephasing due to the Rashba spin–orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba effective magnetic field and the applied magnetic field (AMF). The nonlinearity in spin dephasing time versus the direction of the electric field shows the potential to manipulate the spin lifetime in spintronic device. Moreover, we figure out a quantity that can well represent the inhomogeneous broadening of the system which may help us to understand the many-body spin dephasing due to the Rashba effect.
Keywords
A. Semiconductors , D. Spin dynamics
Journal title
Solid State Communications
Serial Year
2003
Journal title
Solid State Communications
Record number
1762873
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