Title of article
Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
Author/Authors
Zhou، نويسنده , , W.Z. and Lin، نويسنده , , Sergey T. and Shang، نويسنده , , Ly-Mee Yu، نويسنده , , G. and Huang، نويسنده , , Z.M. and Guo، نويسنده , , S.L. and Gui، نويسنده , , Y.S. and Dai، نويسنده , , N. and Chu، نويسنده , , J.H. and Cui، نويسنده , , L.J. and Li، نويسنده , , D.L. and Gao، نويسنده , , H.L. and Zeng، نويسنده , , Y.P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
300
To page
303
Abstract
We have observed the weak antilocalization (WAL) and beating SdH oscillation through magnetotransport measurements performed on a heavily δ -doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As single quantum well in an applied magnetic field up to 13 T and a temperature at 1.5 K. Both effects are caused by the strong Rashba spin–orbit (SO) coupling due to high structure inversion asymmetry (SIA). The Rashba SO coupling constant α and zerofield spin splitting Δ 0 are estimated and the obtained values are consistent from different analysis for this sample.
Keywords
D. Magnetoresistance , D. Two-dimensional electron gas , A. Quantum well
Journal title
Solid State Communications
Serial Year
2007
Journal title
Solid State Communications
Record number
1763777
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