Title of article
First-principles calculation on phase stability and metallization in GeH4 under pressure
Author/Authors
Li، نويسنده , , Zhi and Yu، نويسنده , , Wen and Jin، نويسنده , , Changqing، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
353
To page
357
Abstract
Using a first-principles calculation, we investigated some possible structures of GeH4 similar to those of SiH4 investigated by Feng et al. [J. Feng, W. Grochala, T. Jaron, R. Hoffmann, A. Bergara, N.W. Aschcroft, Phys. Rev. Lett. 96 (2006) 017006] and determined their metallization pressures. It is found that GeH4 has different case with SiH4 and has lower metallization pressure. Structure T2 in germane emerges as an enthalpically competitive structure over the pressure range 55–62 GPa. The metallization pressure for GeH4 with T3 structure is about 50 GPa, which is much lower than that of 91 GPa assumed for the O3 phase of SiH4, i.e. GeH4 could be easier to be metallized than SiH4.
Keywords
D. First-principles calculations , D. Phase transition , E. High pressure
Journal title
Solid State Communications
Serial Year
2007
Journal title
Solid State Communications
Record number
1763799
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