Realization of the intrinsic p-type ZnO thin film by SSCVD

Intrinsic p-type ZnO thin films were first fabricated on silicon(100) substrate by a single source chemical vapor deposition technique, and characterized by the Hall measurements. The optimal results give a Hall mobility of 14.6 cm2/V s, a hole concentration of 2.27×1015 cm−3. Their p-type conductivities were also confirmed by X-ray photoelectron spectroscopy analyses, and the results revealed that the p-type films had an excess of oxygen in contrast to normal n-type ZnO films which had an excess of zinc. And the photoluminescence spectroscopy indicated that these films had defect zinc vacancies and showed significantly stronger ultraviolet emission compared with the n-type films.