Title of article
Rapid thermal annealing induced change of the mechanism of multiphonon resonant Raman scattering from ZnO nanorods
Author/Authors
Ursaki، نويسنده , , V.V. and Lupan، نويسنده , , O.I. and Chow، نويسنده , , L. and Tiginyanu، نويسنده , , I.M. and Zalamai، نويسنده , , V.V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
437
To page
441
Abstract
Multiphonon Resonant Raman scattering (RRS) excited by 351.1 and 363.8 nm lines of an Ar+ laser was studied at temperatures from 10 to 300 K in as-grown and rapid thermal annealed (RTA) aluminum doped ZnO nanorods synthesized by an aqueous chemical deposition method using zinc sulfate, aluminum sulfate, and ammonia hydroxide as precursors. RTA of ZnO nanorods at temperatures 650–750∘C was found to result in changing the mechanism of RRS from incoming to outgoing. This change is suggested to be related to the RTA induced improvement of the optical properties of the nanorods.
Keywords
E. Luminescence , E. Inelastic light scattering , B. Chemical synthesis , A. Semiconductors
Journal title
Solid State Communications
Serial Year
2007
Journal title
Solid State Communications
Record number
1763833
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