• Title of article

    On the upper limit of thermal conductivity GaN crystals

  • Author/Authors

    Danilchenko، نويسنده , , B.A. and Obukhov، نويسنده , , I.A. and Paszkiewicz، نويسنده , , T. and Wolski، نويسنده , , S. and Je?owski، نويسنده , , A.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    4
  • From page
    114
  • To page
    117
  • Abstract
    The maximal value of thermal conductivity κ max of the perfect wurtzite GaN crystal containing isotopes of natural abundance is estimated. Our upper limit of κ = 4800 W/K m at T max = 32 K is smaller than that calculated by Liu and Balandin κ = 6000 W/K m and higher than that obtained by Slack et al. κ = 3750 W/K m . The phenomenological dependence κ ∝ T − 1.43 obtained by Mion et al. for the temperature interval 300–450 K is extended to 200–300 K. For temperatures higher than T max the best fitting of our experimental data to Callaway’s formula is obtained for Grueneisen’s constant equal to γ = 1.35 .
  • Keywords
    C. Point defects , D. Heat conduction , A. Semiconductors
  • Journal title
    Solid State Communications
  • Serial Year
    2007
  • Journal title
    Solid State Communications
  • Record number

    1763921